想彎道超車前提要有彎道..........目前的半導體業發展,還是直線競速賽單看製程幾奈米會被誤導還要看晶片密度三星的3nm"目標"密度還不如台GG的5nm除非三星能找到全新的材料或者是閘道設計,讓漏電跟發熱問題的大跨步解決提高密度或者是SS能搶到更多的EUV讓台GG產能上不去逼的蘋果以外的廠商轉單,創造"市佔"的彎道超車
katokikyo wrote:想彎道超車前提要有彎(恕刪) https://tw.appledaily.com/property/20211201/NORS3L6M5FFWTCDRO6X5YKR75A/萬兆位元真5G!高通Snapdragon 8 Gen 1搭三星Google、海放聯發科天璣9000假設三星製程密度比不上台積電,那高通 8 Gen 1何以海放聯發科天璣9000?
katokikyo wrote:想彎道超車前提要有彎(恕刪) intel千方百計要搞死台積電還能在其他方面的競爭力上拖他後腿嗎https://tw.news.yahoo.com/%E8%8B%B1%E7%89%B9%E7%88%BEceo%E7%A8%B1-%E5%8F%B0%E7%81%A3%E4%B8%8D%E7%A9%A9%E5%AE%9A-%E7%B1%B2%E7%BE%8E%E6%8A%95%E8%B3%87%E4%B8%8D%E8%A9%B2%E8%91%97%E9%87%8D%E5%8F%B0%E7%A9%8D%E9%9B%BB-%E4%B8%89%E6%98%9F-072108533.html
ambitiously wrote:https://tw(恕刪) 驍龍8Gen1對比天璣9000:同為4nm工藝,差距有點大MTK晶體密度比高通還多了近40%高通效能可以略高過MTK(102萬對100.7萬),就是靠更好的架構去彌補製程工藝的不足