法國MBE初創團隊EasyGaN利用工業用MBE機台(和英特磊用同一家的riber機台),產出尺寸直接上到8吋高品質GaN on Si磊晶的AlN on Si層,後續可以繼續用MBE長。
‘’The joined team grew such a template with unprecedented quality in terms of roughness, pit density, and structural quality on an 8-inch Si wafer thanks to a RIBER MBE 49 reactor installed at the CRHEA laboratory. With this step, EasyGaN will be able to provide high-quality AlN templates to the electronic market enabling the fabrication of GaN-on-Si devices with improved breakdown voltages, significantly lower RF losses, and allowing for a higher manufacturing throughput with the required diameters.‘’